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| Composite Transistors XN4608 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification (Tr1) For amplification of low frequency output (Tr2) 2.8 -0.3 0.650.15 6 +0.2 +0.25 1.5 -0.05 0.650.15 1 0.3 -0.05 0.5 -0.05 0.95 1.90.1 0.95 s Features q q 2.9 -0.05 +0.2 5 2 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.1-0.1 +0.2 4 3 s Basic Part Number of Element q 2SD601A+2SB970 0.40.2 s Absolute Maximum Ratings (Ta=25C) Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg Ratings 60 50 7 100 200 -15 -10 -7 - 0.5 -1 300 150 -55 to +150 Unit V V V mA mA V V V A A mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: 5E Internal Connection 6 5 4 Tr1 1 2 3 Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Tr2 Overall Junction temperature Storage temperature 0 to 0.05 0.1 to 0.3 0.8 0.16-0.06 +0.1 1.450.1 +0.1 +0.1 1 Composite Transistors XN4608 (Ta=25C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = -2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 160 0.1 150 3.5 min 60 50 7 0.1 100 460 0.3 V MHz pF typ max Unit V V V A A s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance q Tr2 Parameter Symbol VCBO VCEO VEBO ICBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCB = -10V, IE = 0 VCE = -2V, IC = -0.5A* VCE = -2V, IC = -1A* IC = -0.4A, IB = -8mA IC = -0.4A, IB = -8mA VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 100 60 - 0.16 - 0.8 130 22 - 0.3 -1.2 V V MHz pF * Pulse measurement min -15 -10 -7 - 0.1 350 typ max Unit V V V A Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Common characteristics chart PT -- Ta 500 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) 2 Composite Transistors Characteristics charts of Tr1 IC -- VCE 60 Ta=25C IB=160A 50 XN4608 IB -- VBE 1200 VCE=10V Ta=25C 1000 200 240 IC -- VBE VCE=10V Collector current IC (mA) Base current IB (A) 140A 40 120A 100A 30 80A 20 60A 40A 10 20A 0 0 2 4 6 8 10 Collector current IC (mA) 800 160 600 120 Ta=75C 80 25C -25C 400 200 40 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.4 0.8 1.2 1.6 2.0 Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) IC -- IB 240 VCE=10V Ta=25C 200 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE -- IC 600 VCE=10V 30 10 3 1 0.3 0.1 Ta=75C 0.03 0.01 0.1 -25C 25C Forward current transfer ratio hFE 500 Collector current IC (mA) 160 400 Ta=75C 25C 120 300 -25C 80 200 40 100 0 0 200 400 600 800 1000 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base current IB (A) Collector current IC (mA) Collector current IC (mA) fT -- IE 300 VCB=10V Ta=25C 240 NV -- IC VCE=10V GV=80dB Function=FLAT 200 Ta=25C 160 Transition frequency fT (MHz) 180 Noise voltage NV (mV) 240 120 Rg=100k 120 80 22k 4.7k 60 40 0 -0.1 -0.3 -1 -3 -10 -30 -100 0 10 20 30 50 100 200 300 500 1000 Emitter current IE (mA) Collector current IC (A) 3 Composite Transistors Characteristics charts of Tr2 IC -- VCE -1.2 Ta=25C XN4608 VBE(sat) -- IC -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=50 -100 -30 -10 -3 -1 Ta=75C -0.3 -0.1 -0.03 -0.01 -0.01 -0.03 -0.1 -0.3 25C -25C IC/IB=50 Base to emitter saturation voltage VBE(sat) (V) -1.0 IB=-10mA -9mA -8mA -7mA -6mA -5mA -4mA -30 -10 -3 25C -1 -0.3 -0.1 -0.03 -0.01 -0.01 -0.03 -0.1 -0.3 Ta=-25C 75C Collector current IC (A) -0.8 -0.6 -0.4 -3mA -2mA -0.2 -1mA 0 0 -1 -2 -3 -4 -5 -6 -1 -3 -10 -1 -3 -10 Collector to emitter voltage VCE (V) Collector current IC (A) Collector current IC (A) hFE -- IC 600 VCE=-2V 200 fT -- I E Collector output capacitance Cob (pF) VCB=-10V Ta=25C 80 70 60 50 40 30 20 10 0 -1 Cob -- VCB f=1MHz IE=0 Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 160 400 Ta=75C 25C 120 300 -25C 200 80 100 40 0 -0.01 -0.03 -0.1 -0.3 0 -1 -3 -10 1 2 3 5 10 20 30 50 100 -2 -3 -5 -10 -20 -30 -50 -100 Collector current IC (A) Emitter current IE (mA) Collector to base voltage VCB (V) 4 |
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